glossary:glossary_m
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glossary:glossary_m [2021/08/08 00:39] – [Modulation] Wayne | glossary:glossary_m [2021/08/11 11:02] – [MOSFET] WortingUK | ||
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===== Matrix ===== | ===== Matrix ===== | ||
- | [[http:// | + | [[wp>Diode_matrix|Wikipedea's Matrix entry]]\\ |
[[: | [[: | ||
===== Memory Wire ===== | ===== Memory Wire ===== | ||
Wire made from a special alloy which changes its molecular structure at a certain temperature causing it to shrink. This effect can usefully be applied to point and signal actuation. Some types require a tension spring to pull it back to its original length while others will return unaided, although a spring is still required to keep the wire tight, it can only pull when shrinking, it cannot push.\\ | Wire made from a special alloy which changes its molecular structure at a certain temperature causing it to shrink. This effect can usefully be applied to point and signal actuation. Some types require a tension spring to pull it back to its original length while others will return unaided, although a spring is still required to keep the wire tight, it can only pull when shrinking, it cannot push.\\ | ||
- | [[https:// | + | [[wp>Shape-memory_alloy|Wikipedia's entry]]\\ |
See also TBs: [[http:// | See also TBs: [[http:// | ||
[[https:// | [[https:// | ||
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===== Monostable ===== | ===== Monostable ===== | ||
An electronic circuit that has a single (mono) stable state and an unstable state, an input will cause the circuit to assume the unstable state, when the input signal is removed and after a predictable delay the circuit will return to the stable state. This behaviour is the basis of most timer circuits. | An electronic circuit that has a single (mono) stable state and an unstable state, an input will cause the circuit to assume the unstable state, when the input signal is removed and after a predictable delay the circuit will return to the stable state. This behaviour is the basis of most timer circuits. | ||
- | ===== MOSFET ===== | + | ===== MOSFET |
+ | A MOSFET is a type of transistor with a Gate, Source and Drain terminals. [[wp> | ||
+ | They are the dominant type of transistor in electronics and in chips.\\ | ||
+ | The resistance between Source and Drain (D-S) controlled by the Voltage applied across the Gate and Source. | ||
+ | A Voltage across D-S causes a current to flow in the D-S resistance.\\ | ||
+ | There are several sub-types...\\ | ||
+ | - N channel uses positive Voltages\\ | ||
+ | - P channel uses negative Voltages \\ | ||
+ | - Depletion mode uses increasing Gate Voltage to increase D-S resistance\\ | ||
+ | - Enhancement mode uses decreasing Gate Voltage to decrease D-S resistance\\ | ||
+ | For MERG, the common type is N channel Enhancement mode.\\ | ||
+ | // | ||
- | metal-oxide-semiconductor field-effect transistor [[wp> | ||
+ | The Gate exhibits a very high resistance (insulation) to the Source or Drain.\\ | ||
+ | There being an insulation, the Gate has some capacitance to the other pins and needs to be driven by a low impedance (AC resistance) input signal. A high impedance input signal will make the device slow. An open circuit Gate can build up a charge and results in the D-S going low resistance (turns ' | ||
+ | |||
===== MSAG ===== | ===== MSAG ===== | ||
glossary/glossary_m.txt · Last modified: 2021/08/11 11:57 by WortingUK